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BRIGHT LED ELECTRONICS CORP.
SINCE 1981
DATA SHEET
SHEET DATE
2002.11.07 2003.04.10 2004.11.13
DEVICE NUMBERBIR-BM13V4V-2
2 3 4 CONTENTS
Initial Released DateTsol Ee IeFIG.3 Format Of Sheets Features
1
1.0 1.0 1.0 1.0 1.1 1.1 1.1
2.0 2.0 2.0 2.0
BRIGHT LED ELECTRONICS CORP. 19 3 3F., No. 19, Ho Ping Road, Pan Chiao City, Taipei, Taiwan, R. O. C. Tel: 886-2-29591090 Fax: 886-2-29547006/29558809 www.brtled.com. APPROVED DRAWER
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BIR-BM13V4V-2
END-LOOK PACKAGE IGHT EMITTING DIODE
Features:
1. High radiant power and high radiant intensity. 2. Standard T-1 1/4(5mm)package. 3. Peak wavelength p=940nm. 4. Good spectral matching to si-photodetector. 5. Radiant angle: 60 6. Lens Appearance: Water Clear 7. This product doesn't contain restriction substance, comply ROHS standard
Package Dimensions:
4.98(.196)
7.7(.303) 5(.197) 1.0(.040) 1.5(.059) MAX.
Flat Denotes Cathode 23.4(.921) MIN.
5.9(.232) 0.5(0.197) SQ TYP.
1.0(.040) MIN. 2.54(.100) NOM
Applications: 1. Remote Control. 2. Automatic Control System.
NOTES:
1.All dimensions are in millimeters (inches). 2.Tolerance is 0.25mm (0.01') unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice.
Absolute Maximum Ratings(Ta=25)
Parameter Power Dissipation Continuous Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature
*1 *1
Symbol Pd IF IFP VR Topr Tstg Tsol
Rating 100 100 1.0 5 -45~85 -45~100 260(for 5 seconds)
Cathode
Unit mW mA A V -
Condition for is IFP pulse of 1/10 duty and 0.1 msec width.
Rev:2.0
Page1 of 4
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BIR-BM13V4V-2
Optical- Electrical Characteristics (@TA=25)
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Line Half- Width Viewing Angle Symbol Ie VF IR p 21/2 Test Conditions If=50mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Min 8.41 TYP 17.06 1.25 940 50 60 Max 1.5 100 Unit mW/sr V A nm nm deg
Typical Optical-Electrical Characteristic Curves
Fig.1 Spectral Dlstrbution
1.0
Fig.2 Forward Current Vs Ambient Temperature
120
Relative Radiant Intensity
Forward Current IF (mA)
100
80
0.5
60
40
20 0 -40 -20 0 20 40 60 80 100
840 940 1040 (nm)
Wavelength
Ambient Temperature Fig.4 Relative Radiant Intensity Vs Ambient Tembeb Ature Output Power To Value @50mA
3.0
Fig.3 Forward Current Vs
(mA) 100
80
2.5
Forward Current
2.0
60
1.5
40
1.0
20
0.5 0 -40
0
0
1.0
2.0
3.0
4.0
(V)
-20
0
20
40
60(C)
Forward Voltage Fig.5 Relative Radiant Intensity Vs Forward Current
4.0
Ambient Temperature FIG.6 Radiation Diagram
0 10 20 30
Output Power Relative To Value At @ 50mA
3.0
Relative Radiant Intensity
1.0
40
2.0
0.9 0.8
50 60 70
1.0
0.7
80 90
0
0
20
40
60
80
100 (mA)
Forward Current
0.5
0.3
0.1
0.2
0.4
0.6
Rev:2.0
Page2 of 4
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BIR-BM13V4V-2
Tapping and packaging specifications(Units: mm)
Packaging Bag Dimensions
Notes: 1500pcs per bag, 5Kpcs per box. 2All dimensions are in millimeters(inches). 3Specifications are subject to change without notice.
Rev:2.0
Page3 of 4
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BIR-BM13V4V-2
Infrared Emitting Diode Specification
Commodity: Infrared emitting diode Intensity Bin Limits (At 50mA)
BIN CODE 10 11 12 13 14 15
Min.(mW/sr) 6.00 8.41 11.78 16.50 23.12 32.36
Max.(mW/sr) 11.38 15.95 22.33 31.28 43.79 61.30
Rev:2.0 Page4of 4

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